With almost 20 years of rapid development, LED lighting industry has entered a mature stage. But there is still broad development space in terms of technology. For a long period in the past, the development of visible light LEDs was quite uneven. GaNbased blue LEDs and GaP red LEDs have relatively high luminous efficiency, while that of the yellow and green LEDs between these two is relatively low, especially the yellow LEDs, which luminous efficiency has not reached the practical level for a long time. This phenomenon is also known as the "yellow-green gap." The lack of high-efficiency yellow LEDs makes the excitation phosphor by the blue LED become the mainstream method of white light illumination. However, in the lightto-light conversion process, phosphors have problems such as large heat loss, slow light response, and difficulty in combining light quality and luminous efficacy, which restricts the rapid development of LEDs towards the high-quality, healthy and smart lighting direction to some extent. In addition, although GaP LEDs have been developed and become mature firstly, compared with GaN-based LEDs, there are still some shortcomings. GaP LEDs have relatively strong temperature effects and size effects, and weakness when being applied to the new display field. The band gap of the aluminum gallium indium phosphide (AlGaInP) quaternary system with GaN as the main body can be adjusted between 0.7eV and 6.2eV theoretically, which can completely cover the visible light (1.6-3.1eV) range; moreover, GaN materials also have many advantages such as high mechanical strength, stable chemical properties, high thermal conductivity, and strong radiation resistance. If the emission wavelength of GaN-based LEDs can be further extended to the orange and red light range, then the LED with any bands in the visible light range can be made of nitride, and this is also the ultimate ideal in the field of LED luminescence. This report mainly introduces the latest progress of GaN-on-Si visible light LEDs and visible light LED-based pure LEDs lighting technology. Through collaborative innovation of process and equipment, the GaN-on-Si technology has solved the high-efficiency yellow LED shortage problem in the world for a long time. Accordingly, the luminous efficiency of the green LEDs between the yellow and blue ones has also been significantly improved. Meanwhile, the violet and cyan LEDs close to the blue band have been slightly optimized in terms of the blue LED structure and process, achieving relatively high luminous efficiency as well. By improving the yellow LED quantum well indium (In) composition and quality, at low current densities, the GaN-onSi red-orange LEDs have also achieved relatively high luminous efficiency. So far, the GaN-on-Si LEDs have completed the coverage of the visible spectrum, and the red, orange, yellow, green, cyan, blue, and violet seven-color LEDs have achieved high-efficiency luminescence (some bands are realized at low current densities). And pure LED lighting based on phosphorfree multi-primary color LEDs has also been successfully realized.